2N3904 TRANSISTOR DATASHEET PDF
2N SMALL SIGNAL NPN TRANSISTOR. PRELIMINARY DATA s. SILICON EPITAXIAL PLANAR NPN. TRANSISTOR s. TO PACKAGE SUITABLE FOR. Transistors dimensions section on page 3 of this data sheet. 2N (IC = mAdc, VCE = Vdc). 2N 2N hFE. 70 .. product/ patent coverage may be accessed at resourceone.info pdf. 2N / MMBT / PZT — NPN General-Purpose Amplifier .. Unless otherwise specified in this data sheet, this product is a standard commercial.
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2N Silicon NPN Transistor. General Purpose. TO−92 Type Package. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO. 40V. Characteristic. Max. Units. 2N *MMBT **PZT PD. Total Device Dissipation The datasheet is printed for reference information only. Formative . 2N MMBT PZT NPN General Purpose Amplifier. This device is designed as a general purpose amplifier and switch. The useful dynamic range.
The maximum amount of current that could flow through the Collector pin is mA, hence we cannot connect loads that consume more than mA using this transistor. To bias a transistor we have to supply current to base pin, this current IB should be limited to 5mA. When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter.
When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around mV. When a transistor is used as a switch it is operated in the Saturation and Cut-Off Region as explained above.
As discussed a transistor will act as an Open switch during Forward Bias and as a closed switch during Reverse Bias, this biasing can be achieved by supplying the required amount of current to the base pin. As mentioned the biasing current should maximum of 5mA. Anything more than 5mA will kill the Transistor; hence a resistor is always added in series with base pin.
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The value of this resistor RB can be calculated using below formulae. The value of IB should not exceed mA. Dim Min Max. All Dimensions in mm. No Preview Available!
DC Current Gain. Collector Saturation Voltage. Base Saturation Voltage. Collector Cutoff Current. Emitter Cutoff Current.
Collector-Base Breakdown Voltage. Collector-Emitter Breakdown Voltage. Emitter-base Breakdown voltage.
Gain Bandwidth Product. Collector-Base Capacitance.
Emitter-Base Capacitance. Noise Figure.
Delay Time. Rise Time.
Storage Time. Fall Time.
(Datasheet) 2N3904 pdf
I CEX. C CBO.
C EBO. Test Condition.
Note 2. Part Number. View PDF for Mobile. Seme LAB.
New Jersey Semiconductor. ON Semiconductor.New Jersey Semiconductor. DC Current Gain. Emitter-Base Voltage. Mechanical Data. The value of IB should not exceed mA.
View PDF for Mobile. Amplifier modules like Audio amplifiers, signal Amplifier etc Part Number.
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